• Ceramic substrate CTE is close to silicon, eliminating the Mo transition layer — saves labor, material, and cost.
• Fewer solder layers, lower thermal resistance, fewer voids, higher yield.
• At the same current rating, a 0.3 mm-thick copper foil trace can be only 10% the width of one on a conventional PCB.
• Excellent thermal conductivity allows very compact chip packaging — much higher power density, better system and device reliability.
• Ultra-thin (0.25 mm) ceramic substrates can replace BeO without environmental toxicity concerns.
• High current capacity: 100 A continuous through a 1 mm-wide × 0.3 mm-thick copper body raises temperature about 17°C; 100 A through a 2 mm-wide × 0.3 mm-thick copper body raises temperature only ~5°C.
• Low thermal resistance: a 10 × 10 mm ceramic substrate has 0.31 K/W at 0.63 mm thickness, 0.19 K/W at 0.38 mm, and 0.14 K/W at 0.25 mm.
• High insulation withstand voltage, ensuring personnel safety and equipment protection.
• Enables new packaging and assembly approaches — products are highly integrated and compact.